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STP60NE06-16 STP60NE06-16FP
N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZETM " POWER MOSFET
TYPE STP60NE06-16 STP60NE06-16FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.016 < 0.016
ID 60 A 35 A
TYPICAL RDS(on) = 0.013 EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION
s
TO220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STP60NE06-16 V DS V DGR V GS ID ID IDM (*) P tot V ISO dV/dt T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Unit
STP60NE06-16FP 60 60 20 V V V 35 24 240 40 0.3 2000 6 A A A W W/ o C V V/ns
o o
60 42 240 150 1 -65 to 175 175
C C 1/9
(*) Pulse width limited by safe operating area
(1) ISD 60 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX
December 1997
STP60NE06-16/FP
THERMAL DATA
TO-220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 TO-220FP 3.75
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 25 V) Max Value 60 350 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 60 1 10 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 125 o C
ON ()
Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance V GS = 10V Test Conditions ID = 250 A I D = 30 A 60 Min. 2 Typ. 3 0.013 Max. 4 0.016 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D =30 A V GS = 0 Min. 20 Typ. 35 4600 580 140 6200 800 200 Max. Unit S pF pF pF
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STP60NE06-16/FP
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 30 V R G =4.7 W V DD = 48 V I D = 30 A V GS = 10 V I D = 60 A V GS = 10 V Min. Typ. 40 125 115 25 40 Max. 60 180 160 Unit ns ns nC nC nC
SWITCHING OFF
Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 48 V I D = 60 A R G =4.7 VGS = 10 V Min. Typ. 15 150 180 Max. 25 210 260 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol I SD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A I SD = 60 A V DD = 30 V V GS = 0 di/dt = 100 A/s o T j = 150 C 100 0.4 8 Test Conditions Min. Typ. Max. 60 240 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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STP60NE06-16/FP
Thermal Impedance for TO-220 Thermal Impedance forTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-Source On Resistance
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STP60NE06-16/FP
Gate Charge vs Gate-Source Voltage Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
Source-Drain Diode Forward Characteristics
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STP60NE06-16/FP
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP60NE06-16/FP
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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STP60NE06-16/FP
TO-220FP MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
F1
D
H
F
G1
E F2
123 L2 L4
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G
STP60NE06-16/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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